Ramat Gan, Israel

Dmitry Burstein

This inventor holds 1 USPTO granted patent. Top assignee: Jbf Interlude 2009 Ltd. Active years: 2017.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 69(Granted Patents)


Company Filing History:


Years Active: 2017

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Dmitry Burstein: Innovator in Seamless Multimedia Assembly

Introduction

Dmitry Burstein is a notable inventor based in Ramat Gan, Israel. He has made significant contributions to the field of multimedia technology, particularly in the seamless assembly of video and audio segments. His innovative approach has the potential to enhance user experiences in media consumption.

Latest Patents

Dmitry holds a patent for a "System and method for seamless multimedia assembly." This invention provides systems and methods for the seamless assembly of video and audio segments. The technology allows for a second segment to be downloaded during the presentation of a first segment, ensuring that there is no jitter or gap during the transition. The merged segments are presented as a seamless assembly, making the user unaware that they are viewing two separate segments. This is achieved through the creation of a gapless media file that utilizes a gapless audio encoding scheme, such as Ogg Vorbis.

Career Highlights

Dmitry is associated with JBF Interlude 2009 Ltd., where he continues to develop and refine his innovative ideas. His work focuses on enhancing the quality of multimedia presentations, making them more fluid and engaging for users.

Collaborations

Dmitry has collaborated with notable colleagues, including Jonathan Bloch and Barak Feldman. Their combined expertise contributes to the advancement of multimedia technologies.

Conclusion

Dmitry Burstein's contributions to seamless multimedia assembly represent a significant advancement in the field of media technology. His innovative patent showcases his commitment to improving user experiences in multimedia consumption.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…