Shenzhen, China

Dingliang Wen

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Apple Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dingliang Wen. Retrieved from https://idiyas.com/inventor/dingliang-wen-8bivu532

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Dingliang Wen

Introduction

Dingliang Wen is an inventor based in Shenzhen, China. He is currently associated with Huawei Device Co., Ltd. Despite having no granted patents to his name, he has made significant contributions to the field of electronic devices.

Latest Patent Applications

One of his notable patent applications is titled "Electronic Device with Rear Wall Antenna Parasitic." This application describes an electronic device that may be equipped with peripheral conductive housing structures, a rear wall, and a vent that includes a conductive cowling. The device features an antenna with an antenna arm coupled to a positive antenna feed terminal and a parasitic element. The parasitic element is formed from a conductive trace layered onto the rear wall, indirectly fed by the antenna arm, and overlaps a portion of the conductive cowling. Additionally, the parasitic element may be shorted to a conductive bracket on the rear wall or separated from the bracket by a gap. The conductive cowling may also form some or all of a parasitic element for the antenna, which may be indirectly fed by the conductive trace or include an extension that is indirectly fed by the antenna arm.

Conclusion

Dingliang Wen's work at Huawei Device Co., Ltd. showcases his innovative approach to electronic device design, particularly in antenna technology. His contributions, although not yet reflected in granted patents, highlight the potential for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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