Bethlehem, PA, United States of America

Dinesh A Mehta


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 1980

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1 patent (USPTO):Explore Patents

Title: The Innovative Mind of Dinesh A. Mehta

Introduction

Dinesh A. Mehta, based in Bethlehem, PA, is a notable inventor recognized for his contributions to semiconductor technology. With a keen focus on dynamic memory structures, his work has significantly impacted the field of electronics. He holds a patent that addresses key challenges in memory performance, showcasing his innovative approach to engineering.

Latest Patents

Mehta's most prominent patent is titled "MOS Dynamic memory in a diffusion current limited semiconductor structure." This invention targets the issue of reverse bias leakage currents in dynamic Metal Oxide Semiconductor (MOS) random access memories. His solution minimizes minority carrier generation-type currents, which enhances the integrity of stored charges. By optimizing the semiconductor structure, specifically by using a layered approach, Mehta's design leads to memory circuits with very low leakage currents.

Career Highlights

Throughout his career, Dinesh A. Mehta has held significant positions at renowned companies, including Bell Telephone Laboratories and Western Electric Company, Inc. These prestigious organizations provided him the platform to develop groundbreaking technologies and collaborate with brilliant minds in the field of electronics.

Collaborations

Mehta has had the privilege to work alongside talented colleagues, such as James T. Clemens and James T. Nelson. These collaborations have likely played a crucial role in shaping his inventive processes and outcomes, contributing to advancements in semiconductor technology.

Conclusion

Dinesh A. Mehta's innovative contributions, particularly in the realm of MOS dynamic memories, underline his importance as an inventor in the field of technology. His patent serves as a testament to his skill in addressing complex engineering challenges, ultimately paving the way for enhancements in electronic memory systems.

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