Company Filing History:
Years Active: 2015-2016
Title: Din-How Mei: Innovator in Microelectronic Transistor Technology
Introduction
Din-How Mei is a prominent inventor based in Portland, OR (US). He has made significant contributions to the field of microelectronics, particularly in the fabrication of transistors. With a total of 2 patents to his name, Mei's work has advanced the technology used in microelectronic devices.
Latest Patents
Din-How Mei's latest patents focus on capping dielectric structures for transistor gates. These patents relate to the fabrication of microelectronic transistors, including non-planar transistors. The embodiments described involve the formation of a recessed gate electrode capped by a substantially void-free dielectric capping structure. This structure can be formed using a high-density plasma process, which enhances the performance and reliability of microelectronic devices.
Career Highlights
Mei is currently employed at Intel Corporation, a leading company in the semiconductor industry. His work at Intel has allowed him to be at the forefront of innovations in microelectronic technology. His expertise in the field has contributed to the development of advanced transistor designs that are crucial for modern electronic devices.
Collaborations
Din-How Mei has collaborated with notable colleagues, including Aaron W. Rosenbaum and Sameer S. Pradhan. These collaborations have fostered a productive environment for innovation and have led to significant advancements in their respective fields.
Conclusion
Din-How Mei is a key figure in the development of microelectronic transistors, with a focus on enhancing their fabrication processes. His contributions through patents and collaborations continue to shape the future of microelectronics.