Villebon sur Yvette, France

Didier Sigogne

This inventor holds 1 USPTO granted patent. Top assignee: Alcatel N.v.. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Didier Sigogne. Retrieved from https://idiyas.com/inventor/didier-sigogne-cs6y92m7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: The Innovations of Didier Sigogne

Introduction

Didier Sigogne is a notable inventor based in Villebon sur Yvette, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

One of Didier Sigogne's key inventions is a semiconductor laser with a saturable absorber. This laser design features two successive sections of a light guide that function as a light amplifier (S1) and a saturable absorber (S2). Following the absorber, a passive section (S3) of the guide is included. This invention is particularly applicable to the processing of optical signals, showcasing its relevance in modern technology.

Career Highlights

Didier Sigogne is associated with Alcatel N.V., a prominent company in the telecommunications sector. His work there has allowed him to explore and develop advanced technologies that contribute to the industry.

Collaborations

Throughout his career, Didier has collaborated with notable colleagues such as Joel Jacquet and Jean-Louis Lievin. These partnerships have likely enriched his work and led to further advancements in his field.

Conclusion

Didier Sigogne's contributions to semiconductor technology, particularly through his patent for a semiconductor laser, highlight his innovative spirit and dedication to advancing optical signal processing. His work continues to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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