Heilongjiang, China

Dianzhong Wen


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Heilongjiang, CN (2013)
  • Harbin, CN (2013)

Company Filing History:


Years Active: 2013

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2 patents (USPTO):Explore Patents

Title: The Innovative Mind of Dianzhong Wen

Introduction

Dianzhong Wen is a prominent inventor based in Heilongjiang, China. He has made significant contributions to the field of nanotechnology, particularly in the development of advanced memristor technology. With a total of 2 patents to his name, Wen's work is paving the way for future innovations in electronic devices.

Latest Patents

Wen's latest patents focus on the "Method of manufacturing a nanostructure quick-switch memristor." This innovative device includes an upper electrode, a lower electrode, and three layers of nanomembrane positioned between them. The three layers consist of an N-type semiconductor layer, a neutral semiconductor layer on top of the N-type layer, and a P-type semiconductor layer on the neutral layer. The design of this memristor allows for quick switching speeds, a simple manufacturing method, and low production costs. His other patent, titled "Nanostructure quick-switch memristor and method of manufacturing the same," shares similar features and benefits, emphasizing the efficiency and cost-effectiveness of the manufacturing process.

Career Highlights

Dianzhong Wen is affiliated with Heilongjiang University, where he continues to advance his research in nanotechnology and memristor applications. His academic background and ongoing research contribute to the growing body of knowledge in this innovative field.

Collaborations

Wen collaborates with Xiaohui Bai, a fellow researcher, to further explore the potential of memristor technology and its applications in various electronic devices.

Conclusion

Dianzhong Wen's contributions to the field of nanotechnology and his innovative patents highlight his role as a leading inventor in the industry. His work not only enhances the understanding of memristor technology but also sets the stage for future advancements in electronic devices.

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