Diana Lynn Hackenberg

Title: Diana Lynn Hackenberg: Innovator in Wafer Cleaning Processes

Introduction

Diana Lynn Hackenberg is a notable inventor based in West Melbourne, FL (US). She has made significant contributions to the field of semiconductor processing, particularly in the area of wafer cleaning techniques. Her innovative approach has led to advancements that enhance the quality and efficiency of silicon wafer preparation.

Latest Patents

Diana holds a patent for the SC-2 based pre-thermal treatment wafer cleaning process. This process involves pre-heat-treatment processing of a silicon wafer to grow a hydrophilic oxide layer. The initial step includes contacting the wafer with a pre-clean SC-1 bath, resulting in a highly particle-free silicon wafer surface. Following a deionized water rinse, the wafer is treated with an aqueous solution containing hydrofluoric acid and hydrochloric acid to eliminate metallic-containing oxide from the surface. The SC-2 bath, which contains hydrogen peroxide and a dilute concentration of metal-scouring HCl, is then used to grow the hydrophilic oxide layer. The resulting silicon oxide layer has a metal concentration no greater than 1×10^9. This innovative cleaning process increases the diffusion length of minority carriers from approximately 500-600 microns to a range of 800-900 microns.

Career Highlights

Diana is currently employed at Harris Corporation, where she continues to develop and refine her innovative processes. Her work has been instrumental in improving the semiconductor manufacturing process, making it more efficient and effective.

Collaborations

Diana has collaborated with notable colleagues, including Jack H Linn and George V Rouse, who have contributed to her research and development efforts.

Conclusion

Diana Lynn Hackenberg's contributions to wafer cleaning processes exemplify her innovative spirit and dedication to advancing semiconductor technology. Her patent and work at Harris Corporation highlight her role as a key player in the field.