Minneapolis, MN, United States of America

Deyuan Lyu

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Government of the United States of America and Theiss Research, Inc., Regents of the University of Minnesota. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Deyuan Lyu. Retrieved from https://idiyas.com/inventor/deyuan-lyu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Deyuan Lyu and Scalable Spintronic Devices

Introduction

Deyuan Lyu is an inventor associated with Minneapolis, Minnesota. His patent work includes a device designed to support scalable spintronic technology on silicon wafers.

Latest Patents

Lyu is credited with 1 patent, titled “Scalable Spintronic Devices Formed on Silicon Wafers.” The invention describes a device built on a silicon wafer substrate with a seed layer on its surface. A perpendicular magnetic anisotropy (PMA) layer exhibiting crystalline PMA is formed on the seed layer. The PMA structure includes at least one of the following materials: iron-palladium (FePd), iron-platinum (FePt), or iron-platinum-palladium (Fe(PtPd)) alloy.

Career Highlights

Lyu’s listed organizational affiliations include the Regents of the University of Minnesota, the Government of the United States of America, and Theiss Research, Inc. His patent reflects work on integrating magnetic materials and spintronic device structures with silicon wafers.

Collaborations

Lyu’s named coworkers include Jian-Ping Wang and Daniel B. Gopman. Their shared research context includes the development of spintronic devices and materials.

Conclusion

Deyuan Lyu’s patent focuses on scalable spintronic devices formed on silicon wafers, combining a silicon substrate with crystalline magnetic materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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