Devanand S Sukhdeo

Title: Devanand S Sukhdeo: Innovator in Semiconductor Technology

Introduction

Devanand S Sukhdeo is a notable inventor based in Jersey City, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced laser structures. His innovative work has the potential to impact various applications in electronics and photonics.

Latest Patents

Sukhdeo holds a patent for a "Crossed nanobeam structure for a low-threshold germanium laser." This invention provides a crossed nanobeam structure for strain engineering in semiconductor devices. The design enables light confinement in a subwavelength volume with minimal optical loss. Additionally, the crossing nanobeam induces high tensile strain in the region where the optical mode is tightly confined. This technique reduces the required pumping for achieving net optical gain beyond cavity losses, paving the way for an extremely low-threshold Ge laser source. The structure is also designed for easy integration into electronic and photonic circuits. He has 1 patent to his name.

Career Highlights

Devanand Sukhdeo is affiliated with Leland Stanford Junior University, where he continues to advance his research in semiconductor technologies. His work is characterized by a focus on innovative solutions that enhance the performance of electronic devices.

Collaborations

Sukhdeo has collaborated with notable colleagues, including Donguk Nam and Jan A Petykiewicz. These partnerships have contributed to the development of cutting-edge technologies in the field.

Conclusion

Devanand S Sukhdeo is a prominent inventor whose work in semiconductor technology is paving the way for advancements in laser applications. His innovative patent demonstrates the potential for significant improvements in electronic and photonic circuits.