Derek Lin

Title: Innovations of Derek Lin in Non-Volatile Memory Technology

Introduction

Derek Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in non-volatile memory devices. With a total of 3 patents to his name, Lin's work has advanced the capabilities of memory cells used in various electronic applications.

Latest Patents

One of Lin's latest patents is titled "Method for reducing topography of non-volatile memory and resulting memory cells." This innovative method involves forming a semiconductor structure that reduces the height difference between flash memory cells and MOS devices on the same chip. The process includes providing a substrate, forming a gate stack of a flash memory cell, and reducing the thickness of the gate portion over a capping layer.

Another notable patent is the "Logic compatible storage device." This invention describes a non-volatile memory cell that includes a floating gate over a semiconductor substrate, along with multiple capacitors and a transistor. The design enhances the functionality and efficiency of memory cells, making them more compatible with logic devices.

Career Highlights

Derek Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at TSMC has allowed him to collaborate with some of the brightest minds in the field, contributing to groundbreaking advancements in memory technology.

Collaborations

Lin has worked alongside esteemed colleagues such as Shih Wei Wang and Chen-Ming Huang. Their collaborative efforts have played a crucial role in the development of innovative semiconductor solutions.

Conclusion

Derek Lin's contributions to non-volatile memory technology exemplify the impact of innovative thinking in the semiconductor industry. His patents reflect a commitment to enhancing memory cell performance and compatibility, paving the way for future advancements in electronic devices.