Gloucester, Canada

Derek C Houghton

This inventor holds 3 USPTO granted patents. Top assignees: Sige Semiconductor, Inc., Sige Microsystems Inc.. Active years: 2002-2004.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 3

Forward Citations = 52(Granted Patents)


Company Filing History:


Years Active: 2002-2004

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3 patents (USPTO):Explore Patents

Title: Innovations of Derek C Houghton

Introduction

Derek C Houghton is a notable inventor based in Gloucester, CA. He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar transistors. With a total of 3 patents to his name, Houghton has demonstrated a commitment to advancing electronic device performance.

Latest Patents

Houghton's latest patents include innovative methods for producing Si-Ge base heterojunction bipolar devices. One of his patents describes a bipolar transistor that utilizes a sacrificial mesa over a layer of Si and SiGe. This design prevents a polysilicon covering layer from forming over a predetermined region of the Si and SiGe layer, which is crucial for the transistor base. After an etching process, the sacrificial mesa is removed, exposing the Si and SiGe layer, where an oppositely doped material is applied to form an emitter. This approach allows for a thin layer of silicon germanium to serve as the transistor base, resulting in a more reliable bipolar transistor device yield.

Another patent outlines a method of producing a bipolar transistor that also employs a sacrificial mesa over a layer of SiGe. This method ensures that the base layer SiGe remains unaffected during the etching process, which is a common issue with conventional double-poly processes. Houghton's innovations in this area have the potential to enhance the performance and reliability of bipolar transistors significantly.

Career Highlights

Throughout his career, Houghton has worked with several companies, including Sige Semiconductor, Inc. and Sige Microsystems Inc. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Houghton has collaborated with notable professionals in the field, including Stephen J Kovacic and Hugues Lafontaine. These partnerships have fostered an environment of innovation and have led to the development of advanced technologies in the semiconductor industry.

Conclusion

Derek C Houghton is a distinguished inventor whose work in semiconductor technology has led to significant advancements in bipolar transistor design and production. His innovative patents and collaborations highlight his dedication to improving electronic devices.

Profile summary based on public USPTO records.
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