Dennis L May

Title: Dennis L May: Innovator in Field Effect Transistor Technology

Introduction

Dennis L May is a notable inventor based in Novinger, Missouri, who has made significant contributions to the field of semiconductor technology. His work primarily focuses on enhancing the performance and reliability of field effect transistors. With a patent to his name, May has demonstrated his expertise in this specialized area of innovation.

Latest Patents

Dennis L May holds a patent for a "Limited current density field effect transistor with buried source." This invention features a buried source and drain microwave field effect transistor that reduces current density and electric field intensity near the transistor's surface region. The design improves the operating life and reliability of the transistor by positioning regions of high electrical field intensity and large current density well within the body of the device. The patent also includes comparisons between the buried source and drain field effect transistor and conventional metal semiconductor field effect transistors, focusing on current density, electric field intensity, voltage potentials, and I-V curve comparisons. Additionally, a salient steps fabrication sequence for the buried source and drain field effect transistor is disclosed.

Career Highlights

Dennis L May is currently associated with the United States of America as Represented by the Secretary of the Air Force. His role involves significant research and development in the field of semiconductor technology, contributing to advancements that benefit various applications in the defense sector.

Collaborations

One of his notable collaborators is Mark C Calcatera, with whom he has worked on various projects related to field effect transistors. Their combined expertise has led to innovative solutions in semiconductor technology.

Conclusion

Dennis L May's contributions to the field of field effect transistors highlight his innovative spirit and dedication to advancing technology. His patent reflects a significant step forward in improving the reliability and efficiency of semiconductor devices.