Dennis F Brestovansky

Title: Dennis F Brestovansky: Innovator in Substrate Temperature Control

Introduction

Dennis F Brestovansky is a notable inventor based in Newark, DE (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of substrate temperature control. His innovative work has led to the development of a patented apparatus that enhances the efficiency of vapor deposition processes.

Latest Patents

One of Dennis's key patents is titled "Apparatus and method for substrate temperature control." This invention focuses on controlling the temperature of a substrate onto which thin films of semiconductor materials are vapor deposited. The apparatus features a platen that contacts the surface of the substrate throughout the entire length of the deposition zone. Notably, the platen includes at least one cavity and a rounded edge where the substrate first makes contact at the beginning of the deposition zone. This design is crucial for optimizing the deposition process and improving the quality of the semiconductor films.

Career Highlights

Dennis F Brestovansky is associated with Chevron Research Company, where he has applied his expertise in semiconductor technology. His work at Chevron has allowed him to collaborate with other talented professionals in the field, contributing to advancements in research and development.

Collaborations

Throughout his career, Dennis has worked alongside esteemed colleagues such as Richard E Rocheleau and Peter J Lutz. These collaborations have fostered a productive environment for innovation and have led to significant advancements in their respective fields.

Conclusion

In summary, Dennis F Brestovansky is a distinguished inventor whose work in substrate temperature control has made a lasting impact on semiconductor technology. His innovative patent and collaborations with other professionals highlight his commitment to advancing the field.