Denise Pendleton

Title: Innovations by Denise Pendleton in Semiconductor Technology

Introduction

Denise Pendleton is a notable inventor based in Wappingers Falls, NY (US). She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on improving the methods for forming silicon trench isolation (STI) in semiconductor devices.

Latest Patents

One of her latest patents involves the formation of STI in semiconductor devices that include silicon-on-insulator (SOI) and bulk silicon regions. The patent describes methods for etching silicon trench isolation simultaneously in both SOI and bulk silicon regions. This process includes etching to an uppermost silicon layer using an STI mask, conducting a timed etch to a desired depth in the bulk silicon region, and stopping on a buried insulator of the SOI region. The buried insulator etch can be performed with minimal complexity as part of a hardmask removal step. By selecting the same depth for both regions, her invention effectively avoids complications with subsequent chemical mechanical polishing (CMP) processes. Additionally, it cleans up the boundary between the SOI and bulk regions where silicon nitride residuals may exist.

Career Highlights

Denise Pendleton is currently employed at International Business Machines Corporation (IBM), where she continues to innovate in semiconductor technology. Her expertise and contributions have been instrumental in advancing the field.

Collaborations

Throughout her career, Denise has collaborated with notable colleagues, including Michael D. Steigerwalt and Herbert Lei Ho. These collaborations have further enriched her work and expanded the impact of her inventions.

Conclusion

Denise Pendleton's innovative work in semiconductor technology, particularly in the formation of silicon trench isolation, showcases her expertise and dedication to advancing the field. Her contributions are significant and continue to influence the industry.