This inventor holds 1 USPTO granted patent. Top assignee: At+t Corp.. Active years: 1996.
Company Filing History:
Years Active: 1996
Title: The Innovations of Denis N Buchanan
Introduction
Denis N Buchanan is a notable inventor based in Madison, NJ (US). He has made significant contributions to the field of semiconductor materials, particularly in the development of heteroepitaxial III-V nitride semiconductors. His work has implications for the manufacturing of opto-electronic devices.
Latest Patents
Denis N Buchanan holds a patent for an "Article comprising heteroepitaxial III-V nitride semiconductor material." This patent describes advantageous substrates for III-V nitride semiconductors such as GaN. The substrate material is of the YbFe₂O₄ or InFeO₃(ZnO)ₙ structure type and has a general composition of RAO₃(MO)ₙ. The patent emphasizes the importance of selecting substrate materials that provide less than ±5% lattice mismatch with the III-V nitride semiconductor material to be deposited. This innovation allows for the production of substrate materials that can be manufactured in single crystal form and do not chemically interact with the III-V nitride under typical deposition conditions.
Career Highlights
Denis N Buchanan is associated with AT&T Corp., where he has contributed to advancements in semiconductor technology. His work has been pivotal in enhancing the performance and manufacturability of opto-electronic devices.
Collaborations
Denis has collaborated with notable colleagues such as Charles D Brandle, Jr. and Elliot H Hartford, Jr. Their combined expertise has furthered the development of innovative semiconductor solutions.
Conclusion
Denis N Buchanan's contributions to the field of semiconductor materials and his innovative patent highlight his role as a significant inventor in the industry. His work continues to influence the development of advanced opto-electronic devices.