Dean R Evans

Title: Dean R. Evans: Innovator in Transparent Devices

Introduction

Dean R. Evans is a notable inventor based in Beavercreek, OH (US), recognized for his contributions to the field of optical applications. With a total of 14 patents to his name, he has made significant advancements in the development of transparent devices.

Latest Patents

One of Dean R. Evans' latest patents focuses on fabrication and processing methodologies for transparent PN-junctions and their use in liquid crystal hybrid devices. This innovative device is designed for optical applications and involves several layers. The first layer consists of a transparent conductive oxide, such as indium tin oxide (ITO). The second layer is a transparent semiconductor, which can be a pn-heterojunction or a pn-homojunction, facing the first layer. The third layer contains a liquid crystal, such as E7, which faces the second layer. Finally, the fourth layer comprises either a second transparent conductive oxide or a second transparent semiconductor, facing the third layer. When light illuminates the surface of the transparent metal oxide pn-heterojunction or transparent metal oxide pn-homojunction, it induces photoconductivity, modifying the surface charges.

Career Highlights

Throughout his career, Dean R. Evans has worked with prominent organizations, including the United States of America as represented by the Secretary of the Air Force and Azimuth Corporation. His work has significantly impacted the field of optical devices and their applications.

Collaborations

Dean has collaborated with notable individuals in his field, including Gary R. Cook and Victor Yu Reshetnyak. Their combined expertise has contributed to the success of various projects and innovations.

Conclusion

Dean R. Evans is a distinguished inventor whose work in transparent devices has paved the way for advancements in optical applications. His innovative patents and collaborations highlight his significant contributions to the field.