The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Dec. 16, 2020
Applicant:

Government of the United States As Represented BY the Secretary of the Air Force, Wright-Patterson AFB, OH (US);

Inventors:

Ighodalo U. Idehenre, Tipp City, OH (US);

Dean R. Evans, Beavercreek, OH (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/135 (2006.01); G02F 1/1337 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1354 (2013.01); G02F 1/1357 (2021.01); G02F 1/133784 (2013.01);
Abstract

A transparent device for use in optical applications, and methods for using and manufacturing the device are disclosed. The device generally requires several layers, including (i) a first layer comprising a transparent conductive oxide (such as indium tin oxide (ITO)), (ii) a second layer comprising a transparent semiconductor (e.g., a pn-heterojunction or a pn-homojunction), the second layer having a surface facing the first layer, (iii) a third layer comprising a liquid crystal (such as E7), the third layer having a surface facing the second layer, and (iv) a fourth layer comprising either a second transparent conductive oxide or a second transparent semiconductor, the fourth layer having a surface facing the third layer. When light illuminates a surface of the transparent metal oxide pn-heterojunction or transparent metal oxide pn-homojunction, it induces photoconductivity, modifying the surface charges.


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