De Come Buttet

Title: De Come Buttet: Innovator in Spin-Dependent Tunnelling Technology

Introduction

De Come Buttet is a notable inventor based in Grenoble, France. He has made significant contributions to the field of spin-dependent tunnelling technology. His innovative work has led to the development of a unique patent that showcases his expertise in this area.

Latest Patents

De Come Buttet holds a patent for a Spin-Dependent Tunnelling cell and method of formation thereof. This invention comprises a first barrier layer of a first material and a second barrier layer of a second material, which are sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The design of the first and second barrier layers is such that their combined thickness allows the Tunnelling Magnetoresistance versus voltage characteristic of the cell to achieve a maximum at a non-zero bias voltage. This innovative approach has the potential to enhance the performance of tunnelling cells in various applications.

Career Highlights

Throughout his career, De Come Buttet has worked with prominent organizations, including Freescale Semiconductor, Inc. and the Centre National de la Recherche Scientifique (CNRS). His experience in these companies has allowed him to refine his skills and contribute to groundbreaking research in the field of semiconductor technology.

Collaborations

De Come Buttet has collaborated with esteemed colleagues such as Michel Hehn and Stephane Zoll. These partnerships have fostered a collaborative environment that has led to advancements in their shared field of research.

Conclusion

De Come Buttet's contributions to spin-dependent tunnelling technology exemplify his innovative spirit and dedication to advancing the field. His patent and collaborations highlight the importance of teamwork in achieving significant technological advancements.