Freescale Semiconductor,inc.

Centre National De La Recherche Scientifique

Stmicroelectronics (Crolles 2) Sas

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Stephane Zoll

Michel Hehn

A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.

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Grenoble, France

De Come Buttet