David W McNeil

Title: The Innovations of David W McNeil

Introduction

David W McNeil is a notable inventor based in Harlow, GB. He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar transistors. His innovative approach has led to advancements that enhance the performance and reliability of these essential electronic components.

Latest Patents

David W McNeil holds a patent for a "Method for making bipolar transistors using rapid thermal annealing." This patent describes a process where an interfacial oxide layer is formed over a monocrystalline region, followed by the deposition of polysilicon to create an extrinsic emitter region. After doping the polysilicon, a monocrystalline emitter region is produced in the base region through diffusion. The oxide layer serves as a diffusion barrier, preventing excessive dopant from reaching the monocrystalline region. A subsequent thermal treatment at high temperatures, such as 1100°C, breaks down the interfacial oxide layer, resulting in improved and more consistent transistor characteristics.

Career Highlights

David W McNeil is associated with Stc, Inc., where he has applied his expertise in semiconductor technology. His work has been instrumental in advancing the methods used in the fabrication of bipolar transistors, contributing to the overall progress in the electronics industry.

Collaborations

Throughout his career, David has collaborated with notable colleagues, including Peter D Scovell and Roger L Baker. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in the field.

Conclusion

David W McNeil's contributions to the field of bipolar transistors exemplify the impact of innovative thinking in technology. His patent and collaborative efforts continue to influence advancements in semiconductor manufacturing.