Company Filing History:
Years Active: 1990
Title: David W Dong: Innovator in Dual Electron Injector Structures
Introduction
David W Dong is a notable inventor based in Peekskill, NY (US). He has made significant contributions to the field of memory devices, particularly through his innovative work on Dual Electron Injector Structures.
Latest Patents
David W Dong holds a patent for his invention titled "Dual electron injector structures using a conductive oxide between." This invention relates to DEIS (Dual Electron Injector Structure) EAROM (Electrically Alterable Read Only Memory) devices. The device utilizes a silicon-rich, silicon dioxide insulator between injectors, which has an excess of silicon that is less than the excess of silicon in the silicon-rich, silicon dioxide injectors. The conductive insulator is designed to drain off trapped charge, resulting in improved cyclability, allowing the DEIS EAROM to function as a Non-Volatile Random Access Memory (NVRAM) capable of enduring from 10^8 to greater than 10^10 cycles before threshold collapse occurs.
Career Highlights
David W Dong is associated with the International Business Machines Corporation (IBM), where he has been instrumental in advancing technology in memory devices. His work has paved the way for more efficient and reliable memory solutions in the tech industry.
Collaborations
David has collaborated with Donelli J DiMaria, contributing to the development of innovative technologies in their field.
Conclusion
David W Dong's contributions to the field of memory devices through his patented inventions highlight his role as a significant innovator. His work continues to influence advancements in technology and memory solutions.