San Francisco, CA, United States of America

David Von Dollen

USPTO Granted Patents = 4 

Average Co-Inventor Count = 5.7

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2020-2024

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4 patents (USPTO):Explore Patents

Title: David Von Dollen: Innovator in Quantum Simulation

Introduction

David Von Dollen is a prominent inventor based in San Francisco, CA. He has made significant contributions to the field of quantum simulation, holding a total of four patents. His work focuses on predicting molecular electronic structural information using advanced techniques.

Latest Patents

One of his latest patents involves simulating electronic structures with quantum annealing devices and artificial neural networks. This patent discloses various approaches, techniques, and mechanisms for predicting molecular electronic structural information. In one embodiment, quantum simulation results are generated for a molecule based on a quantum simulation of its electronic structure. The simulation is performed using quantum processing units. An input vector is created, comprising data field values derived from the quantum simulation results for the molecule. An electronic structural information prediction model is then applied to generate predicted electronic structural information for the molecule, based at least in part on the input vector.

Career Highlights

David has worked with notable companies such as Volkswagen AG and Audi AG. His experience in these organizations has contributed to his expertise in the field of quantum simulation and electronic structure prediction.

Collaborations

Some of his coworkers include Florian Neukart and Arne-Christian Voigt. Their collaboration has likely enhanced the innovative processes and research outcomes in their respective projects.

Conclusion

David Von Dollen is a key figure in the realm of quantum simulation, with a focus on molecular electronic structures. His patents and career achievements reflect his dedication to advancing technology in this critical area.

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