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For the Inventor, By the Inventor

Cupertino, CA, United States of America

David Tsang

USPTO Granted Patents = 12

Average Co-Inventor Count = 1.1

ph-index = 9

Forward Citations = 223(Granted Patents)


Company Filing History:

goldMedal12 out of 16 
 
Applied Spintronics Technology, Inc.
 patents
silverMedal1 out of 1,214 
 
Headway Technologies, Incorporated
 patents
where one patent can have more than one assignee

Years Active: 2004-2006

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12 patents (USPTO):Explore Patents
1. 6982916 - Method and system for providing temperature dependent programming for magnetic memories (2006-01-03),
2. 6982445 - MRAM architecture with a bit line located underneath the magnetic tunneling junction device (2006-01-03),
3. 6977838 - Method and system for providing a programmable current source for a magnetic memory (2005-12-20),
4. 6963500 - Magnetic tunneling junction cell array with shared reference layer for MRAM applications (2005-11-08),
5. 6940749 - MRAM array with segmented word and bit lines (2005-09-06),
6. 6933550 - Method and system for providing a magnetic memory having a wrapped write line (2005-08-23),
7. 6909633 - MRAM architecture with a flux closed data storage layer (2005-06-21),
8. 6909630 - MRAM memories utilizing magnetic write lines (2005-06-21),
9. 6870760 - Method and system for performing readout utilizing a self reference scheme (2005-03-22),
10. 6870759 - MRAM array with segmented magnetic write lines (2005-03-22),
11. 6864551 - High density and high programming efficiency MRAM design (2005-03-08),
12. 6812538 - MRAM cells having magnetic write lines with a stable magnetic state at the end regions (2004-11-02),

Title: The Innovative Contributions of David Tsang

Introduction

David Tsang is a prominent inventor based in Cupertino, California, known for his significant contributions to the field of magnetic memory technologies. With a total of 12 patents to his name, Tsang has made remarkable advancements that have the potential to revolutionize data storage solutions.

Latest Patents

Among his latest patents is a method and system for providing temperature-dependent programming for magnetic memories. This innovative approach involves sensing the temperature of the magnetic memory and adjusting the programming current accordingly. The current is designed to be temperature-dependent, allowing for efficient programming of magnetic elements without the need for an additional current source. Another notable patent is related to MRAM architecture, which features a bit line located underneath the magnetic tunneling junction device. This design includes multiple magnetic memory cells and write lines that enhance the functionality and efficiency of magnetic memory systems.

Career Highlights

David Tsang has worked with several notable companies throughout his career, including Applied Spintronics Technology, Inc. and Headway Technologies, Incorporated. His experience in these organizations has allowed him to develop and refine his innovative ideas in magnetic memory technology.

Collaborations

Throughout his career, Tsang has collaborated with talented individuals such as Xizeng Shi and Po-Kang Wang. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

David Tsang's work in magnetic memory technology showcases his innovative spirit and dedication to advancing the field. His patents reflect a deep understanding of the complexities involved in data storage, and his contributions are likely to have a lasting impact on the industry.

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