San Jose, CA, United States of America

David Stanely Maxey

This inventor holds 1 USPTO granted patent. Top assignee: Toshiba Memory Corporation. Active years: 2019.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: David Stanely Maxey: Innovator in Memory Technology

Introduction

David Stanely Maxey is a notable inventor based in San Jose, California. He has made significant contributions to the field of memory technology, particularly with his innovative approach to accessing persistent memory.

Latest Patents

Maxey holds a patent for a DDR storage adapter. This invention discloses a method of accessing persistent memory over a memory interface. In one embodiment, the method includes allocating a virtual address range comprising virtual memory pages associated with physical pages of a memory buffer. Each page table entry associated with the virtual address range is marked as not having a corresponding physical page of the memory buffer. The method generates a page fault when one or more virtual memory pages within the range are accessed, mapping page table entries of the virtual memory pages to the physical pages of the memory buffer. Additionally, it includes transferring data between a physical page of the persistent memory and one of the physical pages of the memory buffer mapped to a corresponding virtual memory page.

Career Highlights

Maxey is currently employed at Toshiba Memory Corporation, where he continues to develop innovative solutions in memory technology. His work has been instrumental in advancing the capabilities of memory interfaces.

Collaborations

Some of his notable coworkers include Nidish Ramachandra Kamath and Vikas Kumar Agrawal, who contribute to the collaborative environment at Toshiba Memory Corporation.

Conclusion

David Stanely Maxey is a key figure in the field of memory technology, with his patent for a DDR storage adapter showcasing his innovative spirit. His contributions continue to influence advancements in memory access methods.

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