Company Filing History:
Years Active: 1998
Title: David S. Piazza: Innovator in RF Semiconductor Technology
Introduction
David S. Piazza is a notable inventor based in Santa Clara, CA, who has made significant contributions to the field of RF semiconductor technology. With a total of 2 patents, his work focuses on improving the efficiency and performance of semiconductor packages.
Latest Patents
One of his latest patents is titled "Low thermal resistance spring biased RF semiconductor package mounting." This invention features a ceramic package and mounting structure that requires less surface area on a heat sink while enhancing heat transfer. The design includes a flat and smooth bottom side, which can be made of polished ceramic or a metal layer that is plated or brazed. The mounting structure utilizes a clamp and a spring to maintain pressure engagement with the heat sink.
Another significant patent by David is "Circuit for automatically biasing RF power transistor by use of on-chip." This circuit arrangement automatically sets the quiescent collector current conditions for a class A/B RF power transistor. It consists of multiple parallel-connected transistors formed in a common semiconductor die. The biasing circuit includes a temperature-sensing transistor and a programmable constant current source, which work together to generate a bias voltage for the RF power device.
Career Highlights
David S. Piazza is currently associated with Spectrian Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing RF technology, making it more efficient and reliable.
Collaborations
Throughout his career, David has collaborated with notable colleagues such as William H. McCalpin and Donald K. Belcher, contributing to various projects and innovations in the semiconductor industry.
Conclusion
David S. Piazza's contributions to RF semiconductor technology through his patents and work at Spectrian Corporation highlight his role as a key innovator in the field. His inventions continue to influence the efficiency and performance of semiconductor devices.