San Jose, CA, United States of America

David Michael Boisvert

This inventor holds 29 USPTO granted patents and 4 published patent applications and 4 EPO patents, primarily in Image Sensing Technology. Top assignees: Quantum-Si Incorporated, Eastman-Kodak Company, National Semiconductor Corporation. Active years: 1990-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David Michael Boisvert. Retrieved from https://idiyas.com/inventor/david-michael-boisvert

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.2

ph-index = 12

Forward Citations = 531(Granted Patents)


Location History:

  • Stanford, CA (US) (1990)
  • Rochester, NY (US) (1993 - 1994)
  • Windham, NH (US) (1999 - 2005)
  • Saratoga, CA (US) (2011)
  • San Jose, CA (US) (2010 - 2023)

Company Filing History:


Years Active: 1990-2025

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Areas of Expertise:
Integrated Photodetector
Temporal Binning
Lifetime Imaging
Noise Reduction
Image Sensors
Electronic Shutter
Signal Processing
Analog Signal Processor
Semiconductor Chip
Low-Power Imaging
High-Sensitivity Amplifier
Pixel Processing
29 patents (USPTO):Explore Patents

Title: Innovations and Contributions of David Michael Boisvert

Introduction

David Michael Boisvert is a prominent inventor based in San Jose, CA, with an extensive portfolio of 29 patents to his name. His work primarily focuses on advanced integrated circuits and photodetection technologies, making significant contributions to the field of electronics and optics.

Latest Patents

Among his latest inventions are two notable patents:

1. **Integrated Device for Temporal Binning of Received Photons**: This integrated circuit features a photodetection region designed to receive incident photons, generating multiple charge carriers in response. It includes at least one charge carrier storage region and a unique charge carrier segregation structure that directs the charge carriers into the storage region based on the timing of their production.

2. **Integrated Photodetector with Direct Binning Pixel**: Similar to the first, this integrated circuit also contains a photodetection region that produces charge carriers when receiving photons. It boasts a charge carrier segregation structure that directly channels the charge carriers into the designated storage region, again based on their production timing.

Career Highlights

David Boisvert has had an impactful career, working with renowned companies such as Quantum-Si Incorporated and National Semiconductor Corporation. His work in these organizations has helped advance the development of photonic devices and integrated circuits, pushing the boundaries of technology in various applications.

Collaborations

Throughout his career, Boisvert has collaborated with notable professionals in the field, including Keith Glen Fife and Jonathan M Rothberg. These partnerships have likely fostered innovation and facilitated the successful development of his patented technologies.

Conclusion

David Michael Boisvert stands out as a significant contributor to the fields of integrated circuits and photodetection. His impressive collection of patents underscores his inventive spirit and dedication to advancing technology. As he continues to innovate, his work will undoubtedly influence future developments in electronics and optics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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