David Mark Dobuzinksy

Title: David Mark Dobuzinksy: Innovator in Semiconductor Technology

Introduction

David Mark Dobuzinksy is a notable inventor based in New Windsor, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to shallow trench isolation (STI) for semiconductor devices. His work has implications for the efficiency and performance of various electronic devices.

Latest Patents

David Mark Dobuzinksy holds a patent for a method of forming shallow trench isolation (STI) for semiconductor devices. The patent describes a process where a first hard mask is deposited over a semiconductor wafer, followed by a second hard mask over the first. The semiconductor wafer includes multiple etching zones, and the etch processes are designed to create smooth sidewall surface structures within the device. This innovative approach alternates between non-selective and selective etch processes to preserve the integrity of the first hard mask material. He has 1 patent to his name.

Career Highlights

Throughout his career, Dobuzinksy has worked with prominent companies in the technology sector. He has been associated with Infineon Technologies AG and International Business Machines Corporation (IBM). His experience in these organizations has allowed him to contribute to cutting-edge advancements in semiconductor technology.

Collaborations

David Mark Dobuzinksy has collaborated with several professionals in his field, including Munir D Naeem and Hiroyuki Akatsu. These collaborations have further enriched his work and have led to advancements in semiconductor processes.

Conclusion

David Mark Dobuzinksy is a distinguished inventor whose work in semiconductor technology has made a lasting impact. His innovative methods for shallow trench isolation demonstrate his commitment to advancing the field. His collaborations and career experiences continue to influence the technology landscape.