Chino Hills, CA, United States of America

David M Warren

This inventor holds 2 USPTO granted patents. Top assignee: Rockwell International Corporation. Active years: 1982-1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David M Warren. Retrieved from https://idiyas.com/inventor/david-m-warren-ziafqdpo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.5

ph-index = 2

Forward Citations = 72(Granted Patents)


Location History:

  • Fullerton, CA (US) (1982)
  • Chino Hills, CA (US) (1988)

Company Filing History:


Years Active: 1982-1988

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2 patents (USPTO):Explore Patents

Title: David M. Warren: Innovator in Thin Film Fabrication

Introduction

David M. Warren, based in Chino Hills, California, is an accomplished inventor with a significant contribution to the field of thin film technology. With two patents to his name, Warren has focused on advancements in multilayer fabrication techniques, showcasing a blend of innovative thinking and practical application.

Latest Patents

David M. Warren's latest patents reflect his expertise in creating sophisticated fabrication methods. One notable invention is the "Multiple Ion Source Method and Apparatus for Fabricating Multilayer," which involves a detailed process for producing solid thin films on substrates. This method includes several steps:

A. Forming a first ion beam from an inert gas.

B. Bombarding a target surface with this ion beam in a vacuum chamber, generating a vapor cloud of target material through sputtering.

C. Adjusting the positions of the substrate and target surfaces to ensure optimal condensation of the vapor onto the substrate.

D. Creating a second ion beam from a mixture of inert and reactive gases.

E. Simultaneously bombarding the substrate surface with the second ion beam to facilitate a chemical reaction, creating a homogeneous thin solid film layer.

F. Alternating the target material to build additional layers.

G. Repeating the above steps to achieve successive layers of different materials.

His other significant invention includes a method for fabricating planar bubble domain device structures, which involves multiple layers of polymeric dielectric materials and conductive materials, showcasing his commitment to advancing material technology in electronic applications.

Career Highlights

David M. Warren is affiliated with Rockwell International Corporation, where he applies his innovative ideas and engineering skills. His work contributes significantly to the development of technologies that leverage multilayer fabrication for various applications, thereby enhancing the performance and capabilities of electronic devices.

Collaborations

In his professional journey, Warren collaborates with esteemed colleagues such as Gene Scott and Charles W. Kohlenberger. These partnerships enable the merging of expertise, fostering an environment where groundbreaking ideas flourish and innovations are brought to fruition.

Conclusion

David M. Warren's contributions to the field of thin film fabrication through his patented innovations demonstrate his pivotal role as an inventor in the technology sector. His work not only advances the science of material fabrication but also lays the groundwork for future developments in electronic materials and devices. As the industry evolves, Warren's inventions will continue to influence the advancements of multilayer technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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