This inventor holds 2 USPTO granted patents. Top assignees: International Business Machines Corporation, Other. Active years: 2001-2002.
Location History:
- Waterbury Center, VT (US) (2001)
- Waterbury Ctr., VT (US) (2002)
Company Filing History:
1 out of 166,264 
1 out of 834,411 Years Active: 2001-2002
Title: David Lachtrupp: Innovator in Semiconductor Technology
Introduction
David Lachtrupp is a notable inventor based in Waterbury, Vermont. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to solving complex engineering challenges.
Latest Patents
Lachtrupp's latest patents include a Multi-level fuse structure and Mixed fuse technologies. The Multi-level fuse structure patent describes a semiconductor device featuring a first and second conductor for fuse terminals. A fuse portion is positioned on a different level relative to both conductors, with contacts connecting the fuse portion to each conductor. The Mixed fuse technologies patent outlines a system where various types of fuses are integrated on a semiconductor wafer. This design allows for the activation of one type of fuse without affecting others, enabling efficient repairs at both the wafer and module levels.
Career Highlights
Throughout his career, Lachtrupp has worked with prominent companies, including International Business Machines Corporation (IBM). His experience in the industry has allowed him to develop innovative solutions that address critical issues in semiconductor manufacturing.
Collaborations
Lachtrupp has collaborated with notable professionals in the field, including Chandrasekhar Narayan and Kenneth C Arndt. These collaborations have contributed to the advancement of semiconductor technologies and have fostered a spirit of innovation.
Conclusion
David Lachtrupp's work in semiconductor technology exemplifies the impact of innovation in engineering. His patents reflect a commitment to improving the functionality and reliability of semiconductor devices.