David L Patterson

Title: The Innovations of David L Patterson

Introduction

David L Patterson is an accomplished inventor based in Belmar, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to SIMOX wafers. His work has implications for improving the quality and performance of semiconductor devices.

Latest Patents

One of Patterson's notable patents is titled "High temperature annealing to improve SIMOX characteristics." This invention provides a method for treating a SIMOX wafer to substantially reduce oxygen precipitates and heavy metal, carbon, and other contaminants. The method involves forming a protective layer on the SIMOX surface, heating the wafer and protective layer to dissolve and diffuse the precipitates and contaminants into the protective layer, and then slowly cooling the wafer to allow continued diffusion during the cooling process. This patent showcases his expertise and innovative approach to solving complex problems in semiconductor manufacturing. He holds 1 patent.

Career Highlights

David L Patterson has had a distinguished career, working at General Electric Company, where he has been able to apply his innovative ideas in a practical setting. His work at GE has allowed him to contribute to advancements in technology that have a lasting impact on the industry.

Collaborations

Throughout his career, Patterson has collaborated with talented individuals such as Lubomir L Jastrzebski and Gary W Looney. These collaborations have fostered an environment of innovation and creativity, leading to significant advancements in their respective fields.

Conclusion

David L Patterson's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the industry, showcasing the importance of innovation in technology development.