This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 2003-2004.
Company Filing History:
Years Active: 2003-2004
Title: David L. Hawken: Innovator in Semiconductor Technology
Introduction
David L. Hawken is a notable inventor based in Vestal, NY (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to enhancing structural integrity in advanced semiconductor devices.
Latest Patents
Hawken's latest patents focus on a unique feature design that enables structural integrity for advanced low-k semiconductor chips. This design incorporates a mesh-like reinforcing structure that inhibits delamination and cracking in multilayer semiconductor devices. The structure is fabricated using low-k dielectric materials and copper-based metallurgy. It comprises conductive pads interconnected by conductive lines at each wiring level. Each pad is conductively connected to its adjacent pad at the next wiring level through a plurality of conductive vias. This innovative reinforcing structure provides both vertical and horizontal reinforcement, which can be fabricated on the periphery of the active device region or within open regions susceptible to delamination and cracking.
Career Highlights
David L. Hawken is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing solutions that enhance the reliability and performance of semiconductor devices.
Collaborations
Hawken has collaborated with notable colleagues, including Charles Robert Davis and Dae Young Jung. These partnerships have contributed to the advancement of innovative technologies within the semiconductor industry.
Conclusion
David L. Hawken's contributions to semiconductor technology through his patents and work at IBM highlight his role as a key innovator in the field. His designs not only improve device performance but also pave the way for future advancements in semiconductor manufacturing.
