Location History:
- Manassas, VA (US) (1978 - 1982)
- Winooski, VT (US) (1980 - 1985)
Company Filing History:
Years Active: 1978-1985
Title: David L. Bergeron - Innovator in Semiconductor Technology
Introduction
David L. Bergeron is a prominent inventor based in Winooski, Vermont, known for his significant contributions to semiconductor technology. With a total of 13 patents to his name, Bergeron has made remarkable advancements in the field, particularly in the design and fabrication of bipolar transistor devices.
Latest Patents
Among his latest patents is the "Trench-defined semiconductor structure," which presents an improved device isolated by a trench formed in an N conductivity type semiconductor substrate. This innovation features first and second spaced apart P conductivity type regions butted to the trench's sidewall, enhancing device performance. Another notable patent is the "Method of making a saturation-limited bipolar transistor device," which describes a merged NPN and PNP transistor structure that allows for denser cell configurations and efficient current management.
Career Highlights
David L. Bergeron has built a successful career at International Business Machines Corporation (IBM), where he has been instrumental in developing cutting-edge semiconductor technologies. His work has not only advanced the capabilities of bipolar transistors but has also contributed to the overall progress in electronic device performance.
Collaborations
Throughout his career, Bergeron has collaborated with esteemed colleagues, including Geoffrey B. Stephens and Zimri C. Putney. These partnerships have fostered innovation and have led to the successful development of various semiconductor technologies.