The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1982
Filed:
Nov. 10, 1980
David L Bergeron, Winooski, VT (US);
Daniel J Fleming, South Burlington, VT (US);
Geoffrey B Stephens, Cary, NC (US);
IBM Corporation, Armonk, NY (US);
Abstract
A self-isolated Schottky Barrier diode structure and method of fabrication are disclosed for generating a device having controlled characteristics. An opening is made through an oxide layer over a central region of an n-type semiconductor substrate. The opening has inclined sidewalls over an annular region surrounding the central region of the substrate. An n-type dopant layer is ion implanted through the opening and the surrounding oxide layer. This controls the barrier height for the Schottky Barrier diode. In the region of the substrate surrounding the annular region, where the ion implantation takes place through the full thickness of the oxide, the lifetime of minority carriers is controlled. This has the effect of minimizing PNP parasitic transistor action. A Schottky Barrier contact is formed in the opening through the oxide layer creating a rectifying junction with the semiconductor substrate in the central region.