David L Bender

Title: The Innovations of David L. Bender

Introduction

David L. Bender is a notable inventor based in Thousand Oaks, California. He has made significant contributions to the field of crystal growth technology, holding a total of 14 patents. His work focuses on improving processes for single crystal growth, which is essential in various applications, including semiconductor manufacturing.

Latest Patents

Among his latest patents is the "Weir method for improved single crystal growth in a continuous Czochralski process." This method discloses a technique for continuous crystal growing, where one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material. The process involves separating the molten crystalline material, controlling its flow, and defining an annular space with respect to the sidewalls of a heat shield in the chamber. Another significant patent is the "System for continuous growing of monocrystalline silicon." This improved system is based on the Czochralski process and features a low aspect ratio, large diameter, and substantially flat crucible. It includes an optional weir surrounding the crystal, which helps eliminate convection currents and reduce oxygen content in the finished single crystal silicon ingot.

Career Highlights

David has worked with prominent companies such as Atlantic Richfield Company and Solaicx, Inc. His experience in these organizations has contributed to his expertise in crystal growth technologies and innovations.

Collaborations

Throughout his career, David has collaborated with notable individuals, including Samuel N. Rea and G. Felix Wakefield. These collaborations have likely enriched his work and led to advancements in the field.

Conclusion

David L. Bender's contributions to the field of crystal growth technology are significant and impactful. His innovative patents and career achievements highlight his role as a leading inventor in this specialized area.