Hoboken, NJ, United States of America

David James Eaglesham


Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 276(Granted Patents)


Location History:

  • Hoboken, NJ (US) (1992 - 2000)
  • Hudson, NJ (US) (1998 - 2000)

Company Filing History:


Years Active: 1992-2000

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4 patents (USPTO):Explore Patents

Title: David James Eaglesham: Innovator in Semiconductor Technology

Introduction

David James Eaglesham is a prominent inventor based in Hoboken, NJ, known for his significant contributions to semiconductor technology. With a total of four patents to his name, Eaglesham has made notable advancements in the field of device fabrication and dopant diffusion control.

Latest Patents

One of his latest patents is titled "Process for device fabrication using a high-energy boron implant." This patent discloses a method for semiconductor device fabrication where a Czochralski silicon substrate is implanted with boron. The boron is implanted using an energy range of about 500 keV to about 3 MeV and a dose between approximately 3 x 10^13 /cm^2 to about 3 x 10^14 /cm^2. To reduce the threading dislocation density in the substrate to less than about 10^3 /cm^2 at a depth of at least about 0.5 μm, the substrate undergoes a two-step annealing process. The first step involves annealing at a temperature between about 725°C to about 775°C, followed by a second anneal at a temperature of at least about 900°C. The duration of the first step is crucial for achieving the desired dislocation density. Another significant patent is "Process for controlling dopant diffusion in a semiconductor layer," which focuses on controlling the diffusion of ion-implanted dopants by incorporating electrically inactive impurities in a semiconductor layer through various crystal growth techniques.

Career Highlights

Eaglesham has worked with notable companies such as Lucent Technologies Inc. and AT&T Bell Laboratories, where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the industry and has had a lasting impact on semiconductor device fabrication.

Collaborations

Throughout his career, David has collaborated with esteemed colleagues, including Hans-Joachim Ludwig Gossmann and John Milo Poate. These collaborations have further enriched his work and contributed to the development of innovative technologies in the semiconductor field.

Conclusion

David James Eaglesham is a distinguished inventor whose work in semiconductor technology has led to significant advancements in device fabrication and dopant diffusion control. His contributions continue to influence the industry and inspire future innovations.

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