Chelmsford, United Kingdom

David James Burnitt

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Bae Systems, Inc.. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David James Burnitt. Retrieved from https://idiyas.com/inventor/david-james-burnitt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: David James Burnitt: Innovator in Radio Frequency Technology

Introduction

David James Burnitt is a notable inventor based in Chelmsford, GB. He has made significant contributions to the field of radio frequency technology. His innovative work has led to the development of a unique duplexer, which enhances the functionality of radio frequency antennas.

Latest Patents

David holds a patent for a duplexer designed for radio frequency antennas. This invention includes a radio frequency signal transmitter port and a receiver port, along with a switch that can adopt two states. The switch connects either the transmitter or receiver port to a common input/output port, depending on the monitored radio frequency power. This intelligent control mechanism ensures optimal performance of the antenna system.

Career Highlights

David is currently employed at BAE Systems, Inc., where he continues to push the boundaries of radio frequency technology. His work at BAE Systems has allowed him to collaborate with other talented professionals in the field.

Collaborations

Some of David's coworkers include Simon Charles Giles and Andrew Mark Steliou. Their collective expertise contributes to the innovative environment at BAE Systems.

Conclusion

David James Burnitt is a distinguished inventor whose work in radio frequency technology has made a significant impact. His patent for a duplexer exemplifies his commitment to innovation in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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