Salisbury, PA, United States of America

David J Lischner


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 39(Granted Patents)


Company Filing History:


Years Active: 1984-1985

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2 patents (USPTO):Explore Patents

Title: David J Lischner: Innovator in Silicon Device Technology

Introduction

David J Lischner is a notable inventor based in Salisbury, PA (US). He has made significant contributions to the field of silicon device technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

Lischner's latest patents include a "Method of making dielectrically isolated silicon devices" and a "Process for producing silicon devices." The first patent describes a technique for producing structures useful for dielectrically isolated high voltage devices. This method involves creating a cavity in a silicon wafer, oxidizing the surface to form a dielectric material, and depositing silicon onto this material. The entire region of polycrystalline silicon is then melted, resulting in a thick region of dielectrically isolated single crystal silicon, which is essential for high voltage devices. The second patent outlines a process for producing dielectrically isolated regions of single crystal silicon through a specific melting process. This involves treating a substrate with regions of single crystal silicon in contact with non-single crystal silicon overlying a dielectric material. The non-single crystal silicon is melted using radiant energy, and upon cooling, it converts into a region of single crystal material.

Career Highlights

David J Lischner has worked at AT&T Bell Laboratories, where he has been able to apply his innovative ideas in silicon technology. His work has contributed to advancements in the production of high voltage devices and other silicon-based technologies.

Collaborations

Lischner has collaborated with notable coworkers such as George K Celler and McDonald Robinson, further enhancing the impact of his work in the field.

Conclusion

David J Lischner's contributions to silicon device technology through his patents and work at AT&T Bell Laboratories highlight his role as an influential inventor. His innovative methods continue to shape the future of high voltage devices and silicon technology.

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