Northampton, United Kingdom

David J Foster

This inventor holds 1 USPTO granted patent. Top assignee: Plessey Overseas Limited. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David J Foster. Retrieved from https://idiyas.com/inventor/david-j-foster-tteeay10

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: David J Foster: Innovator in Semiconductor Technology

Introduction

David J Foster is a notable inventor based in Northampton, GB. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

David holds a patent for a "Method of making a LDD MOSFET." This invention showcases his expertise in developing advanced semiconductor devices, which are crucial for modern electronic applications.

Career Highlights

David J Foster is currently employed at Plessey Overseas Limited, where he continues to work on cutting-edge technologies. His role at the company allows him to apply his knowledge and skills in semiconductor manufacturing and design.

Collaborations

David has collaborated with Andrew James Pickering, further enhancing his work in the field. Their partnership exemplifies the importance of teamwork in driving innovation.

Conclusion

David J Foster is a prominent figure in semiconductor innovation, with a valuable patent and a strong career at Plessey Overseas Limited. His contributions continue to impact the technology landscape significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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