Company Filing History:
Years Active: 2024-2025
Title: David Hartley: Innovator in DRAM Technology
Introduction
David Hartley is a prominent inventor based in Berlin, Germany. He has made significant contributions to the field of memory technology, particularly in dynamic random-access memory (DRAM). With a total of 4 patents to his name, Hartley is recognized for his innovative approaches to mitigating issues related to DRAM performance.
Latest Patents
Hartley's latest patents include groundbreaking technologies aimed at enhancing DRAM functionality. One of his notable inventions is a DRAM memory controller designed to identify a marker command directed to a specific row in a DRAM. This controller refreshes a neighboring row if a certain threshold probability is met, effectively addressing the rowhammer issue. Another significant patent focuses on dynamic rowhammer management, where a memory controller counts row activation commands and sends a mitigative refresh command based on a predefined activation count threshold. These inventions showcase Hartley's commitment to improving memory technology and ensuring data integrity.
Career Highlights
David Hartley is currently employed at Qualcomm Incorporated, a leading company in wireless technology and semiconductor design. His work at Qualcomm has allowed him to push the boundaries of memory technology and contribute to advancements that benefit various applications in the tech industry.
Collaborations
Throughout his career, Hartley has collaborated with talented professionals in the field. Notable coworkers include Victor Van Der Veen and Pankaj Deshmukh, who have worked alongside him on various projects aimed at enhancing DRAM technology.
Conclusion
David Hartley's innovative contributions to DRAM technology have positioned him as a key figure in the field. His patents reflect a deep understanding of memory systems and a commitment to solving complex challenges. As technology continues to evolve, Hartley's work will undoubtedly play a crucial role in shaping the future of memory solutions.