Qualcomm Incorporated

David Hartley

Victor Van Der Veen

Pankaj Deshmukh

Behnam Dashtipour

Mosaddiq Saifuddin

Managing row hammering in a DRAM device may include maintaining per-row activation command counts. A next aggressor row may be determined based on the counts. A victim queue may be maintained. A refresh operation may be directed to a row indicated by the victim queue when conditions include that the victim queue is not empty when the refresh command is received. The current aggressor row may be updated with the next aggressor row when conditions include that the victim queue is empty when the refresh command is received. Following updating the current aggressor row, the count of the next aggressor row may be updated. A victim row corresponding to the current aggressor row may be added to the victim queue if the victim queue is empty when the refresh command is received.

Dynamic rowhammer management with per-row hammer tracking

A DRAM memory controller is provided that identifies a marker command directed to a given row in a DRAM. If a threshold probability is satisfied in response to an identification of the marker command, the DRAM memory controller commands the DRAM to refresh a neighboring row in the DRAM. The neighboring row may be a neighboring of the given row or of a recently-closed row.

DRAM with quick random row refresh for rowhammer mitigation

Mitigating or managing an effect known as 'rowhammer' upon a DRAM device may include a memory controller receiving an activation count threshold value from the DRAM device. The memory controller may detect row activation commands directed to the DRAM device and count the number of the row activation commands. The memory controller may send a mitigative refresh command to the DRAM device based on the result of comparing the counted number of row activation commands with the received activation count threshold value.

Dynamic rowhammer management

An effect known as 'rowhammer' may be mitigated in a DRAM organized in sub-banks of two or more rows. Row activation commands directed to a sub-bank may be detected. The number of row activation commands occurring within a refresh window may be counted and compared with a threshold. When it is detected that the number of row activation commands within the refresh window exceeds the threshold, an additional refresh command may be provided to the DRAM.

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Berlin, Germany

David Hartley