David H Whysall

Title: David H Whysall: Innovator in Hall Effect Devices

Introduction

David H Whysall is a notable inventor based in Harlow, GB. He has made significant contributions to the field of semiconductor technology, particularly in the development of Hall effect devices. His innovative approach has led to advancements that enhance the performance and efficiency of these devices.

Latest Patents

David H Whysall holds a patent for a "Method of making a Hall effect device." This patent describes a Hall effect device that comprises a thin substrate free epitaxially grown semiconductor body mounted in a magnetically permeable housing, such as ferrite. The semiconductor layer, preferably made of gallium arsenide or gallium indium arsenide, is grown on a substrate that is removed through a selective etching process after device processing is complete. This design allows for a smaller device with high sensitivity and good noise characteristics, as the flux concentrators are much smaller than those used in conventional Hall effect systems. Other semiconductor materials that can be utilized for these novel thin Hall effect devices include silicon.

Career Highlights

David H Whysall is associated with the International Standard Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's portfolio but has also influenced the broader field of electronics.

Collaborations

David has collaborated with notable colleagues, including Gillies D Pitt and Peter D Greene. Their combined expertise has fostered innovation and development in their respective projects.

Conclusion

David H Whysall's contributions to the field of Hall effect devices exemplify the impact of innovative thinking in technology. His patent and work at the International Standard Electric Corporation highlight his role as a key figure in semiconductor advancements.