The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1983
Filed:
Feb. 22, 1982
Gillies D Pitt, Saffron Walden, GB;
Peter D Greene, Harlow, GB;
Edward J Thrush, Stansted Mountfitchet, GB;
David H Whysall, Harlow, GB;
International Standard Electric Corporation, New York, NY (US);
Abstract
A Hall effect device comprises a thin substrate free epitaxially grown semiconductor body mounted in a magnetically permeable, e.g. ferrite, housing. The layer, which is preferably gallium arsenide or gallium indium arsenide, is grown on a substrate which, after device processing is complete, is removed by a selective etching process. In view of the relatively high sensitivity and good noise characteristics such a device with its flux concentrator is small, since the flux concentrators are themselves much smaller than with conventional Hall effect systems. Other semiconductor materials from which the novel thin Hall effect devices can be made include silicon.