David Grasso

Title: Innovator Spotlight: David Grasso

Introduction: David Grasso is a prominent inventor based in San Jose, CA, known for his noteworthy contributions to the field of semiconductor technology. With a focus on high voltage integrated circuits, Grasso's innovative designs significantly enhance the performance and reliability of electronic devices.

Latest Patents: David Grasso holds a patent for a "Lightly-doped drain MOSFET with improved breakdown characteristics." This invention introduces a unique passivation structure that effectively shields the underlying circuit from the electrical effects of charge accumulation. The patent describes a silicon-rich nitride layer that is highly resistive, allowing only negligible current flow between circuit elements while ensuring that charge on the surface can be effectively managed, thus preserving the integrity of the integrated circuit.

Career Highlights: Grasso is currently employed at Silinconix, Inc., where he continues to push the boundaries of technology through his innovative work. His expertise in semiconductor design and functionality has made a lasting impact on the performance of integrated circuits in various applications.

Collaborations: Throughout his career, David Grasso has collaborated with talented co-workers including Richard Kent Williams and Michael E. Cornell. Together, they have fostered an environment of creativity and innovation, contributing to the advancement of semiconductor technology.

Conclusion: David Grasso exemplifies the spirit of innovation in the field of electronics. His patent for the lightly-doped drain MOSFET with improved breakdown characteristics showcases his commitment to enhancing circuit design, making him a valuable contributor to his field and a respected figure at Silinconix, Inc. As technology continues to evolve, inventors like Grasso will play a crucial role in shaping the future of electronic devices.