Leominster, MA, United States of America

David Garcia

This inventor holds 1 USPTO granted patent. Top assignee: Ase Americas, Inc.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David Garcia. Retrieved from https://idiyas.com/inventor/david-garcia-871uigvw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: The Innovations of David Garcia

Introduction

David Garcia is an accomplished inventor based in Leominster, MA (US). He has made significant contributions to the field of crystal growth technology. His innovative work has led to the development of a unique apparatus that addresses critical challenges in the manufacturing process.

Latest Patents

David holds a patent for the EFG crystal growth apparatus. This invention features a new EFG (Edge-defined Film-fed Growth) crucible/die configuration. It effectively overcomes the tendency for silicon feed material to form a solid mass near the center hub region in the hot-zone during crystal growth. Additionally, it prevents the crucible/die unit from fracturing its supporting susceptor during cool-down.

Career Highlights

David is currently employed at Ase Americas, Inc., where he continues to innovate and develop new technologies. His work has been instrumental in advancing the efficiency and reliability of crystal growth processes.

Collaborations

David collaborates with talented coworkers, including Jeffrey X Cao and Robert M Giancola. Their combined expertise fosters a creative environment that drives innovation.

Conclusion

David Garcia's contributions to the field of crystal growth technology exemplify the spirit of innovation. His patent for the EFG crystal growth apparatus showcases his ability to solve complex problems in manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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