David F Hebert

Title: David F Hebert: Innovator in Electron Emission Technology

Introduction

David F Hebert is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of electron emission technology. His innovative work has led to the development of a unique patent that enhances electron emission properties.

Latest Patents

David F Hebert holds a patent for a "Gated electron field emitter having an interlayer." This invention features electron-emitting microtip protrusions in an emitter layer that are separated from a dielectric layer by an interlayer. This interlayer prevents substantial mixing of the dielectric and the emitter layer during the growth of the dielectric layer. A conductive gate electrode layer is deposited on the dielectric layer, which is crucial for the functionality of the emitter. For carbon-based emitters, aluminum is identified as one of several suitable interlayers between the carbon layer and a silicon dioxide dielectric layer. He has 1 patent to his name.

Career Highlights

David is associated with Extreme Devices Incorporated, where he applies his expertise in electron emission technology. His work at the company has been instrumental in advancing the field and developing innovative solutions.

Collaborations

David has collaborated with notable colleagues, including Keith D Jamison and Donald E Patterson. Their combined efforts have contributed to the success of various projects within the company.

Conclusion

David F Hebert is a distinguished inventor whose work in electron emission technology has made a significant impact. His innovative patent and collaboration with talented colleagues highlight his contributions to the field.