Extreme Devices Incorporated

David F Hebert

Randolph D Schueller

Keith D Jamison

Donald E Patterson

Charlie Hong

A field emitter ( ) having improved electron emission properties is provided. Electron-emitting microtip protrusions ( ) in an emitter layer ( ) are separated from a dielectric layer ( ) by an interlayer ( ) that prevents substantial mixing of the dielectric ( ) and the emitter layer ( ) during growth of the dielectric layer ( ). A conductive gate electrode layer ( ) is deposited on the dielectric layer ( ). For carbon-based emitters, aluminum is one of several suitable interlayers between the carbon layer and a silicon dioxide dielectric layer.

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Austin, TX, United States of America

David F Hebert