Schenectady, NY, United States of America

David DeCrescente, Jr


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: David DeCrescente, Jr: Innovator in Interconnect Device Fabrication

Introduction

David DeCrescente, Jr. is an accomplished inventor based in Schenectady, NY (US). He has made significant contributions to the field of interconnect devices, showcasing his innovative spirit through his patented work.

Latest Patents

David holds a patent for a "Method of fabricating an interconnect device." This invention outlines a comprehensive process that includes providing a flexible substrate, forming vias through the substrate, applying a conductive seed layer, and conducting copper plating, among other steps. His patent represents a notable advancement in the fabrication of interconnect devices, with a focus on efficiency and effectiveness. He has 1 patent to his name.

Career Highlights

David is currently employed at General Electric Company, where he applies his expertise in engineering and innovation. His role at such a prestigious company underscores his capabilities and the value he brings to the field of technology.

Collaborations

Throughout his career, David has collaborated with talented individuals such as Kevin Matthew Durocher and William Edward Burdick, Jr. These partnerships have likely contributed to the success of his projects and innovations.

Conclusion

David DeCrescente, Jr. exemplifies the spirit of innovation through his work in interconnect device fabrication. His contributions to the field are noteworthy, and his patent reflects his commitment to advancing technology.

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