Provo, UT, United States of America

David D Allred

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignees: Moxtek, Inc., Brigham Young University, Multilayer Optics and X-Ray Technology, Inc.. Active years: 1993-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David D Allred. Retrieved from https://idiyas.com/inventor/david-d-allred-3gfuswg6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 142(Granted Patents)


Company Filing History:


Years Active: 1993-1996

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3 patents (USPTO):Explore Patents

Title: Innovations of David D Allred

Introduction

David D Allred is a notable inventor based in Provo, UT (US). He has made significant contributions to the field of x-ray dispersive and reflective structures. With a total of 3 patents, his work focuses on enhancing performance in specific ranges of interest.

Latest Patents

Allred's latest patents include advancements in high throughput reflectivity and resolution x-ray dispersive structures. These structures utilize special materials that exhibit improved performance. They are formed of alternating thin layers of uranium, uranium compounds, or uranium alloys, combined with spacer materials that have low absorptance. This design is particularly suited for applications in water window microscopy, nitrogen analysis, carbon analysis, boron analysis, and x-ray lithography. The construction of these structures employs standard thin layer deposition techniques such as evaporation, sputtering, and chemical vapor deposition (CVD). Additionally, novel methods allow for the deposition of thinner and smoother layers.

Another significant patent involves x-ray wave diffraction optics constructed by atomic layer epitaxy. In this process, a crystalline substrate is prepared with multiple surface areas for layer deposition. The layers are formed by atomic layer epitaxy, ensuring that each layer pair has a different index of refraction. This design allows x-ray waves to be effectively reflected from the layers, with layer pairs having a thickness of about 20 angstroms or less.

Career Highlights

Throughout his career, David D Allred has worked with prominent organizations such as Moxtek, Inc. and Brigham Young University. His expertise in the field has led to innovative solutions and advancements in x-ray technology.

Collaborations

Allred has collaborated with notable individuals, including James M Thorne and James K Shurtleff. These partnerships have contributed to the development of his groundbreaking patents.

Conclusion

David D Allred's contributions to x-ray technology through his patents and collaborations highlight his innovative spirit and dedication to advancing the field. His work continues to influence research and applications in various scientific domains.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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