Oxted, United Kingdom

David C Yule


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: David C Yule: Innovator in Semiconductor Technology

Introduction

David C Yule is a notable inventor based in Oxted, GB. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patent that addresses critical challenges in semiconductor devices.

Latest Patents

David C Yule holds a patent for a semiconductor device having high breakdown voltage. This invention involves a semiconductor body that features a first device region of one conductivity type, which forms a pn junction with a second device region of the opposite conductivity type. The design allows for a high electric field to exist between the first pn junction and a floating further region, minimizing the risk of device breakdown.

Career Highlights

David C Yule is associated with U.S. Philips Corporation, where he has contributed to advancements in semiconductor technology. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Throughout his career, David has collaborated with notable colleagues, including John A Slatter and Henry E Brockman. These collaborations have fostered innovation and development in the semiconductor field.

Conclusion

David C Yule's contributions to semiconductor technology exemplify the impact of innovative thinking in engineering. His patent reflects a commitment to advancing the capabilities of semiconductor devices, ensuring their reliability and efficiency.

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