Darrel C Oglesby, Jr

Title: Darrel C Oglesby, Jr: Innovator in Semiconductor Technology

Introduction

Darrel C Oglesby, Jr. is a notable inventor based in Sherman, TX (US), recognized for his contributions to semiconductor technology. He holds a total of 3 patents, showcasing his innovative spirit and technical expertise in the field.

Latest Patents

One of his latest patents is for a vertical bipolar transistor and a method of manufacture therefor, which includes two epitaxial layers and a buried layer. This invention provides a vertical bipolar transistor that may include, in one embodiment, a second epitaxial layer located over a first epitaxial layer, wherein the second epitaxial layer includes at least two dopant profiles. The vertical bipolar transistor may further include a collector, a base, and an emitter located over or within the second epitaxial layer. Another significant patent is for a buried Zener diode structure and method of manufacture, which requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.

Career Highlights

Darrel C Oglesby, Jr. is currently employed at Texas Instruments Corporation, where he continues to develop innovative solutions in semiconductor technology. His work has significantly impacted the industry, particularly in the design and manufacturing of advanced electronic components.

Collaborations

Throughout his career, Darrel has collaborated with talented individuals such as Gregory George Romas, Jr. and Scott F Jasper, contributing to various projects that enhance the capabilities of semiconductor devices.

Conclusion

Darrel C Oglesby, Jr. exemplifies the spirit of innovation in the semiconductor industry through his patents and contributions at Texas Instruments Corporation. His work continues to influence the development of advanced electronic technologies.